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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTH 88N30P IXTT 88N30P
RDS(on)
VDSS = 300 ID25 = 88 = 40 m
V A
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M
Maximum Ratings 300 300 20 V V V A A A A mJ J V/ns W C C C C
TO-247 (IXTH)
D (TAB)
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 TO-268
300
1.13/10 Nm/lb.in. 6 10 5 g g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 100 25 250 40 V V nA A A m
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99129A(01/04)
(c) 2004 IXYS All rights reserved
IXTH 88N30P IXTT 88N30P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 50 6300 VGS = 0 V, VDS = 25 V, f = 1 MHz 950 190 25 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 24 96 25 180 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 44 90 S pF pF pF ns ns ns ns nC nC nC 0.21 K/W (TO-247) (TO-264) 0.21 0.15 K/W K/W
Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
1 2 3
TO-247 AD Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 88 220 1.5 250 3.3 A A V ns C
TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 88N30P IXTT 88N30P
Fig. 1. Output Characteristics @ 25C
90 80 70 VGS = 10V 9V 8V 200 180 160 140 VGS = 10V 9V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
60 50 40 30 20 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 7V
120 100 80 60 40 20 0 0 2 4 6 8 6V 5V 10 12 14 16 18 20 7V
V D S - Volts Fig. 3. Output Characteristics @ 125C
90 80 70 VGS = 10V 9V 8V 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 1 2 3 4 5 6 7 8 9 -50 -25 0 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
I D - Amperes
60 50 40 30 20 10 0
7V
R D S (on) - Normalized
I D = 88A I D = 44A
6V
5V
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to
3.4 3.2 3 2.8 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 140 160 180 200 TJ = 25C
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
100 90 80
0.5 ID25 Value vs. ID
VGS = 10V
R D S (on) - Normalized
I D - Amperes
2.6
TJ = 125C
70 60 50 40 30 20 10 0
I D - Amperes
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXTH 88N30P IXTT 88N30P
Fig. 7. Input Adm ittance
160 140 120 100 80 60 40 20 0 4 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125C 25C -40C 100 90 80 TJ = -40C 25C 125C
Fig. 8. Transconductance
g f s - Siemens
70 60 50 40 30 20 10 0 0
I D - Amperes
20
40
60
80
100
120
140
160
180
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
280 240 200 10 9 8 VDS = 150V I D = 44A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
7
VG S - Volts
TJ = 125C TJ = 25C
160 120 80 40 0 0.4 0.6 0.8
6 5 4 3 2 1 0
V S D - Volts
1
1.2
1.4
1.6
0
20
40
60
80
100
120
140
160
180
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 150C R DS(on) Limit TC = 25C 25s
Fig. 11. Capacitance
10000
Capacitance - picoFarads
C iss
I D - Amperes
100 1ms 10ms 10 DC
100s
1000
C oss
f = 1MHz
C rss
100 0 5 10 15 20 25 30 35 40
1 10 100 1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXTH 88N30P IXTT 88N30P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1.00
R(th) J C - C / W
0.10
0.01 1 10 1 00 1000
Puls e W idth - millis ec onds
(c) 2004 IXYS All rights reserved

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